Open AccessHigh mobility SiMOSFETs fabricated in a full 300 mm CMOS process
Author(s) -
Timothy N. Camenzind,
Ahmed Elsayed,
Fahd A. Mohiyaddin,
Ruoyu Li,
Stefan Kubicek,
Julien Jussot,
Pol Van Dorpe,
B. Govoreanu,
Iuliana Radu,
Dominik M. Zumbühl
Publication year - 2021
Publication title -
materials for quantum technology
Language(s) - English
Resource type - Journals
ISSN - 2633-4356
DOI - 10.1088/2633-4356/ac40f4
Subject(s) - cmos , materials science , optoelectronics , interface (matter) , quality (philosophy) , semiconductor , process (computing) , quantum dot , electron mobility , quantum , oxide , nanotechnology , engineering physics , computer science , physics , composite material , metallurgy , capillary number , quantum mechanics , capillary action , operating system
The quality of the semiconductor–barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the device quality. For devices fabricated in a full complementary metal oxide semiconductor (CMOS) process and of very thin oxide below a thickness of 10 nm, we report a record mobility of 17.5 × 10 3 cm 2 V −1 s −1 indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.
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