Open AccessBilayer MoS2 on silicon for higher terahertz amplitude modulation
Author(s) -
Alka Jakhar,
Prabhat Kumar,
Sajid Husain,
Veerendra Dhyani,
Abhilasha Chouksey,
Prashant Kumar,
J. S. Rawat,
Samaresh Das
Publication year - 2021
Publication title -
nano express
Language(s) - English
Resource type - Journals
ISSN - 2632-959X
DOI - 10.1088/2632-959x/ac1ef6
Subject(s) - terahertz radiation , materials science , amplitude modulation , raman spectroscopy , optoelectronics , modulation (music) , bilayer , silicon , optics , frequency modulation , bandwidth (computing) , physics , chemistry , telecommunications , biochemistry , membrane , computer science , acoustics
The terahertz (THz) amplitude modulation has been experimentally demonstrated by employing bilayer molybdenum disulfide (MoS 2 ) on high-resistivity silicon (Si). The Raman spectroscopy and x-ray photoelectron spectra confirm the formation of bilayer MoS 2 film. The THz transmission measurements are carried out using a continuous wave (CW) frequency-domain THz system. This reveals the higher modulation depth covering wide THz spectra of 0.1–1 THz at low optical pumping power. The modulation depth up to 72.3% at 0.1 THz and 62.8% at 0.9 THz under low power optical excitation is achieved. After annealing, the strong built-in electric field is induced at the MoS 2 –Si interface due to p -type doping in MoS 2 . This improves modulation depth to 86.4% and 79.7%, respectively. The finite-difference time-domain (FDTD) based numerical simulations match well with the experimental results. The higher modulation depth at low optical power, broadband response, low insertion losses, and simplicity in the design are the key attributes of this THz modulator.