Electrical transport properties and impedance analysis of Au/ZnO nanorods/ITO heterojunction device | Zendy

Guru Prasad Kuppuswamy | Zendy; Gobinath Marappan | Zendy; Surya Elangovan | Zendy; Surya Velappa Jayaraman | Zendy; K. Kamala Bharathi | Zendy; Gunasekaran Venugopal | Zendy; Corrado Di Natale | Zendy; Yuvaraj Sivalingam | Zendy

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Electrical transport properties and impedance analysis of Au/ZnO nanorods/ITO heterojunction device

Author(s) -

Guru Prasad Kuppuswamy,

Gobinath Marappan,

Surya Elangovan,

Surya Velappa Jayaraman,

K. Kamala Bharathi,

Gunasekaran Venugopal,

Corrado Di Natale,

Yuvaraj Sivalingam

Publication year - 2020

Publication title -

nano express

Language(s) - English

Resource type - Journals

ISSN - 2632-959X

DOI - 10.1088/2632-959x/abc6f8

Subject(s) - nanorod , materials science , optoelectronics , heterojunction , ohmic contact , indium tin oxide , dielectric spectroscopy , substrate (aquarium) , space charge , photoluminescence , charge carrier , nanotechnology , thin film , chemistry , electrochemistry , layer (electronics) , electrode , oceanography , physics , quantum mechanics , geology , electron

Our work involves the growth of well aligned vertical nanorods of ZnO on transparent indium doped tin oxide (ITO) conductive substrate and fabrication of Au/ZnO Nanorods/ITO Heterojunction device. The observation of non-ideal diode current density-voltage (J-V) characteristics of the device has been evaluated with various conduction mechanisms [Ohmic, space-charge limited conduction (SCLC)]. The charge carrier mobility is estimated to be ∼0.05 cm 2 /Vs. The presence of deep level defects in the ZnO nanorods is accountable for these two different transport mechanisms and it is backed by photoluminescence, distinctly. The estimated density of deep trap states is n trap ∼ 5.76 × 10 13 cm −3 . The charge carrier density and built-in potential of this device are obtained from electrochemical impedance spectroscopy (EIS). The average work function of vertical ZnO nanorods is found out to be ∼4.93 eV. Henceforth, our results explain the charge transport mechanism which plays a key role in optoelectronic based devices for various applications.

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