Open AccessOptical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
Author(s) -
Yves-Bernard André,
Nebile Işık Göktaş,
Guillaume Monier,
Hadi Hijazi,
H. Mehdi,
Catherine Bougerol,
L. Bideux,
Agnès Trassoudaine,
D. Paget,
J. Leymarie,
Evelyne Gil,
Christine Robert-Goumet,
Ray LaPierre
Publication year - 2020
Publication title -
nano express
Language(s) - English
Resource type - Journals
ISSN - 2632-959X
DOI - 10.1088/2632-959x/aba7f1
Subject(s) - passivation , high resolution transmission electron microscopy , materials science , photoluminescence , nanowire , transmission electron microscopy , luminescence , optoelectronics , nanotechnology , plasma , nanometre , layer (electronics) , composite material , physics , quantum mechanics
The structural and optical properties of individual ultra-long GaAs nanowires (NWs) were studied after different nitrogen passivation process conditions. The surface morphology of the NWs after passivation was characterized by high resolution transmission electron microscopy (HRTEM) and high angle annular dark field (HAADF) imaging. Electron energy loss spectroscopy (EELS) confirmed the presence of nitrogen on the NW surface. Micro-photoluminescence ( μ -PL) on single NWs indicated an increase of the luminescence intensity upon passivation. This work reveals the efficacy of a plasma passivation process on complex nanometer-scale morphologies.