Open AccessControlled formation of Schottky diodes on n-doped ZnO layers by deposition of p-conductive polymer layers with oxidative chemical vapor deposition
Author(s) -
Linus Krieg,
Zhipeng Zhang,
Daniel Splith,
Holger von Wenckstern,
Marius Grundmann,
Xiaoxue Wang,
Karen K. Gleason,
T. Voss
Publication year - 2020
Publication title -
nano express
Language(s) - English
Resource type - Journals
ISSN - 2632-959X
DOI - 10.1088/2632-959x/ab82e6
Subject(s) - pedot:pss , materials science , schottky diode , schottky barrier , chemical vapor deposition , optoelectronics , doping , heterojunction , diode , deposition (geology) , conductive polymer , work function , chemical engineering , polymer , nanotechnology , layer (electronics) , composite material , paleontology , sediment , engineering , biology
We report the controlled formation of organic/inorganic Schottky diodes by depositing poly(3,4-ethylenedioxythiophene) (PEDOT) on n-doped ZnO layers using oxidative chemical vapor deposition (oCVD). Current-voltage measurements reveal the formation of Schottky diodes that show good thermal and temporal stability with rectification ratios of 10 7 and ideality factors of ∼1.2. In the frame of a Schottky model, we identify a mean barrier height at the hybrid inorganic-organic interface of 1.28 eV, which is consistent with the difference between the work function of PEDOT and the electron affinity of ZnO. The findings highlight the strength of oCVD to design high-quality hybrid PEDOT/ZnO heterojunctions with possible applications in electronic and optoelectronic devices.