Open AccessRapid subsurface damage detection of SiC using inductivity coupled plasma
Author(s) -
Yi Zhang,
Linfeng Zhang,
Keyu Chen,
Dianzi Liu,
Dong Li,
Hui Deng
Publication year - 2021
Publication title -
international journal of extreme manufacturing
Language(s) - English
Resource type - Journals
eISSN - 2631-8644
pISSN - 2631-7990
DOI - 10.1088/2631-7990/abff34
Subject(s) - scanning electron microscope , materials science , etching (microfabrication) , substrate (aquarium) , plasma , microscope , optoelectronics , plasma etching , reactive ion etching , atmospheric pressure plasma , atmospheric pressure , optics , analytical chemistry (journal) , nanotechnology , composite material , chemistry , chromatography , oceanography , physics , layer (electronics) , quantum mechanics , geology
This paper proposes a method for the rapid detection of subsurface damage (SSD) of SiC using atmospheric inductivity coupled plasma. As a plasma etching method operated at ambient pressure with no bias voltage, this method does not introduce any new SSD to the substrate. Plasma diagnosis and simulation are used to optimize the detection operation. Assisted by an SiC cover, a taper can be etched on the substrate with a high material removal rate. Confocal laser scanning microscopy and scanning electron microscope are used to analyze the etching results, and scanning transmission electron microscope (STEM) is adopted to confirm the accuracy of this method. The STEM result also indicates that etching does not introduce any SSD, and the thoroughly etched surface is a perfectly single crystal. A rapid SSD screening ability is also demonstrated, showing that this method is a promising approach for the rapid detection of SSD.