Open AccessGe-on-Si single-photon avalanche diode detectors for short-wave infrared wavelengths
Author(s) -
Fiona Thorburn,
Xin Yi,
Zoë M. Greener,
Jarosław Kirdoda,
Ross W. Millar,
Laura L. Huddleston,
Douglas J. Paul,
Gerald S. Buller
Publication year - 2021
Publication title -
jphys photonics
Language(s) - English
Resource type - Journals
ISSN - 2515-7647
DOI - 10.1088/2515-7647/ac3839
Subject(s) - detector , optoelectronics , avalanche photodiode , photon , diode , photodetector , optics , wavelength , picosecond , silicon , infrared , single photon avalanche diode , physics , photonics , avalanche diode , germanium , materials science , laser , breakdown voltage , quantum mechanics , voltage
Germanium-on-silicon (Ge-on-Si) based single-photon avalanche diodes (SPADs) have recently emerged as a promising detector candidate for ultra-sensitive and picosecond resolution timing measurement of short-wave infrared (SWIR) photons. Many applications benefit from operating in the SWIR spectral range, such as long distance light detection and ranging, however, there are few single-photon detectors exhibiting the high-performance levels obtained by all-silicon SPADs commonly used for single-photon detection at wavelengths <1 µ m. This paper first details the advantages of operating at SWIR wavelengths, the current technologies, and associated issues, and describes the potential of Ge-on-Si SPADs as a single-photon detector technology for this wavelength region. The working principles, fabrication and characterisation processes of such devices are subsequently detailed. We review the research in these single-photon detectors and detail the state-of-the-art performance. Finally, the challenges and future opportunities offered by Ge-on-Si SPAD detectors are discussed.