Open AccessExperimental advances in charge and spin transport in chemical vapor deposited graphene
Author(s) -
Himanshu Mishra,
J. Panda,
M. Ramu,
Tapati Sarkar,
JeanFrançois Dayen,
Daria Belotcerkovtceva,
M. Venkata Kamalakar
Publication year - 2021
Publication title -
jphys materials
Language(s) - English
Resource type - Journals
ISSN - 2515-7639
DOI - 10.1088/2515-7639/ac1247
Subject(s) - spintronics , graphene , chemical vapor deposition , nanotechnology , materials science , spin (aerodynamics) , wafer , charge (physics) , electron mobility , ballistic conduction , condensed matter physics , optoelectronics , ferromagnetism , physics , electron , quantum mechanics , thermodynamics
Despite structural and processing-induced imperfections, wafer-scale chemical vapor deposited (CVD) graphene today is commercially available and has emerged as a versatile form that can be readily transferred to desired substrates for various nanoelectronic and spintronic applications. In particular, over the past decade, significant advancements in CVD graphene synthesis methods and experiments realizing high-quality charge and spin transport have been achieved. These include growth of large-grain graphene, new processing methods, high-quality electrical transport with high-carrier mobility, micron-scale ballistic transport, observations of quantum and fractional quantum Hall effect, as well as the spintronic performance of extremely long spin communication over tens of micrometers at room temperature with robust spin diffusion lengths and spin lifetimes. In this short review, we discuss the progress in recent years in the synthesis of high-quality, large-scale CVD graphene and improvement of the electrical and spin transport performance, particularly towards achieving ballistic and long-distance spin transport that show exceptional promise for next-generation graphene electronic and spintronic applications.