Open AccessExtraordinary Hall balance in ultrathin SrRuO3 bilayers
Author(s) -
Thierry C. van Thiel,
Dirk J. Groenendijk,
Andrea D. Caviglia
Publication year - 2020
Publication title -
jphys materials
Language(s) - English
Resource type - Journals
ISSN - 2515-7639
DOI - 10.1088/2515-7639/ab7a03
Subject(s) - spintronics , condensed matter physics , hall effect , berry connection and curvature , materials science , realization (probability) , oxide , magnetization , epitaxy , ferromagnetism , nanotechnology , physics , layer (electronics) , electrical resistivity and conductivity , magnetic field , statistics , mathematics , quantum mechanics , geometric phase , metallurgy
The correlated 4d transition metal oxide SrRuO 3 (SRO) features an anomalous Hall effect that originates from momentum-space sources of Berry curvature and depends sensitively on the magnetization. Here, we exploit this sensitivity and realize an epitaxial extraordinary Hall balance device, consisting of two ultrathin layers of SRO, separated by an insulating SrTiO 3 (STO) spacer. Our results highlight the potential of ultrathin SRO in the realization of oxide-based spintronic devices.