
Low-power-consumption organic field-effect transistors
Author(s) -
Yiwei Duan,
Bowen Zhang,
Shizan Zou,
Chuqi Fang,
Qijing Wang,
Yi Shi,
Xinyi Liu
Publication year - 2020
Publication title -
jphys materials
Language(s) - English
Resource type - Journals
ISSN - 2515-7639
DOI - 10.1088/2515-7639/ab6305
Subject(s) - power consumption , transistor , electronics , energy consumption , subthreshold conduction , materials science , computer science , power (physics) , electrical engineering , nanotechnology , voltage , engineering , physics , quantum mechanics
At present, the electrical performance of organic field-effect transistors (OFETs) has reached the level of commercial amorphous silicon. OFETs show considerable application potential in artificial intelligence, deep learning algorithms, and artificial skin sensors. The devices which can operate with high performance and low power consumption are needed for these applications. The recent energy-related improvement to realize low-power consumption OFETs were reviewed, including minimizing operating voltage, reducing subthreshold swing, and decreasing contact resistance. In this review, we demonstrate breakthroughs in materials and methods to decrease power consumption, providing a promising avenue toward low-power consumption organic electronics.