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Deterministic loading of a single strontium ion into a surface electrode trap using pulsed laser ablation
Author(s) -
Alto Osada,
Atsushi Noguchi
Publication year - 2022
Publication title -
journal of physics communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.407
H-Index - 17
ISSN - 2399-6528
DOI - 10.1088/2399-6528/ac4b4a
Subject(s) - ion trap , ion , materials science , trapped ion quantum computer , electrode , ablation , atomic physics , photoionization , laser ablation , ion trapping , laser , quantum , optoelectronics , chemistry , physics , optics , quantum computer , quantum simulator , ionization , aerospace engineering , organic chemistry , quantum mechanics , engineering
Trapped-ion quantum technologies have been developed for decades toward applications such as precision measurement, quantum communication and quantum computation. Coherent manipulation of ions’ oscillatory motions in an ion trap is important for quantum information processing by ions, however, unwanted decoherence caused by fluctuating electric-field environment often hinders stable and high-fidelity operations. One way to avoid this is to adopt pulsed laser ablation for ion loading, a loading method with significantly reduced pollution and heat production. Despite the usefulness of the ablation loading such as the compatibility with cryogenic environment, randomness of the number of loaded ions is still problematic in realistic applications where definite number of ions are preferably loaded with high probability. In this paper, we demonstrate an efficient loading of a single strontium ion into a surface electrode trap generated by laser ablation and successive photoionization. The probability of single-ion loading into a surface electrode trap is measured to be 82%, and such a deterministic single-ion loading allows for loading ions into the trap one-by-one. Our results open up a way to develop more functional ion-trap quantum devices by the clean, stable, and deterministic ion loading.

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