Open AccessModification of the Terman method for determination of interface states in metal–insulator–semiconductor structures
Author(s) -
N. Novkovski
Publication year - 2017
Publication title -
journal of physics communications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.407
H-Index - 17
ISSN - 2399-6528
DOI - 10.1088/2399-6528/aa8cf8
Subject(s) - semiconductor , interface (matter) , insulator (electricity) , band gap , silicon , materials science , condensed matter physics , dielectric , charge density , metal , work (physics) , optoelectronics , physics , quantum mechanics , composite material , capillary number , capillary action , metallurgy
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom