Open AccessTheoretical frequency limit of organic field-effect transistors
Author(s) -
ChangHyun Kim
Publication year - 2019
Publication title -
flexible and printed electronics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.832
H-Index - 18
ISSN - 2058-8585
DOI - 10.1088/2058-8585/ab59cc
Subject(s) - transistor , observable , limit (mathematics) , parametric statistics , field (mathematics) , transit time , space charge , component (thermodynamics) , field effect transistor , contact resistance , space (punctuation) , physics , materials science , computer science , engineering , quantum mechanics , electrode , mathematics , voltage , mathematical analysis , statistics , transport engineering , pure mathematics , operating system , electron
In this paper, a new theoretical model for the ac transit frequency of organic field-effect transistors is proposed. The model is built upon an advanced physical description of the contact resistance as a key mathematical component. Such a treatment self-consistently and predictively correlates the transit frequency to a number of materials, geometrical, and operational parameters. By navigating a broad parametric space, it is found that the ambitious gigahertz operation is observable only in highly downscaled devices, and the intrinsic carrier mobilities and charge-injection barriers required to reach that regime are specified.