Open AccessEnergetic disorder impacts energy-level alignment of alpha-sexithiophene on hydrogen-terminated silicon and silicon oxide
Author(s) -
Botong Chen,
Jiaxin Hu,
Qi Wang,
Steffen Duhm
Publication year - 2022
Publication title -
materials research express
Language(s) - English
Resource type - Journals
ISSN - 2053-1591
DOI - 10.1088/2053-1591/ac8644
Subject(s) - band bending , x ray photoelectron spectroscopy , materials science , ultraviolet photoelectron spectroscopy , fermi level , silicon , band gap , layer (electronics) , oxide , thin film , hydrogen , silicon oxide , density of states , optoelectronics , analytical chemistry (journal) , condensed matter physics , nanotechnology , chemistry , electron , nuclear magnetic resonance , physics , silicon nitride , organic chemistry , quantum mechanics , metallurgy , chromatography
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