Open AccessEnhancement of the near-band-edge electroluminescence from the active ZnO layer in the ZnO/GaN-based light emitting diodes using AlN-ZnO/ZnO/AlN-ZnO double heterojunction structure
Author(s) -
Bo-Rui Huang,
Kui-Shou You,
Kai-Chao Yang,
Day-Shan Liu
Publication year - 2021
Publication title -
materials research express
Language(s) - English
Resource type - Journals
ISSN - 2053-1591
DOI - 10.1088/2053-1591/ac3fdd
Subject(s) - materials science , optoelectronics , heterojunction , electroluminescence , layer (electronics) , light emitting diode , luminescence , epitaxy , wide bandgap semiconductor , ultraviolet , zinc , diode , nanotechnology , metallurgy
In this work, an AlN-ZnO/ZnO/AlN-ZnO double heterojunction (DH) structure prepared using the cosputtering technology was deposited onto the p -type GaN epitaxial layer. The indiffusion of the oxygen atoms to the p -GaN epilayer was obstructed as the cosputtered AlN-ZnO film inset between n -ZnO/ p -GaN interface. The near-ultraviolet (UV) emission from this ZnO/GaN-based light emitting diode (LED) was greatly improved as compared to an n -type ZnO film directly deposited onto the p -GaN epilayer. Meanwhile, the native defects in the n -ZnO layer associated with the green luminescence was less likely to form while it was sandwiched by the cosputtered AlN-ZnO film. As the thickness of the active n- ZnO layer in the DH structure reached 10 nm, the near-band-edge (NBE) emission became the predominated luminescence over the resulting LED spectrum.