Open AccessMechanism of defects and electrode structure on the performance of AlN-based metal semiconductor metal detectors
Author(s) -
Guanghui Li,
Pengbo Wang,
XinRan He,
Meng Yang,
Feng Liang,
Mi Zhou,
Danyun Zhao
Publication year - 2021
Publication title -
materials research express
Language(s) - English
Resource type - Journals
ISSN - 2053-1591
DOI - 10.1088/2053-1591/ac3dad
Subject(s) - detector , electrode , materials science , optoelectronics , dislocation , sapphire , metalorganic vapour phase epitaxy , semiconductor , substrate (aquarium) , chemical vapor deposition , metal , optics , nanotechnology , epitaxy , chemistry , composite material , metallurgy , physics , laser , oceanography , layer (electronics) , geology
We used the metal-organic chemical vapor deposition(MOCVD) method to grow AlN material on a c-plane sapphire substrate and fabricate an AlN-based metal-semiconductor-metal (MSM) detector. Analyzing the influence mechanism of different dislocation densities in AlN materials and detector electrode structure on the detector performance, it was found that the lower the dislocations can effectively reduce the dark current of the detector under zero bias voltage, and help improve the performance of the detector. The study also found that when the finger spacing of the detector remained the same and the finger width increased, the efficiency of the detector decreased, while the response time of the detector increased, when the finger width of the detector electrodes remained unchanged and the finger spacing increased, the response time of the detector increased. Therefore, the electrode finger width and finger spacing must be compromised in the design of the electrode structure to improve the performance of the AlN-based MSM detector.