Open AccessAn inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth
Author(s) -
Zixuan Zhang,
Yi Luo,
Jiadong Yu,
Xiang Li,
Jian Wang,
Wenjie Yu,
Lai Wang,
Zhibiao Hao,
Changzheng Sun,
Yujie Han,
Bing Xiong,
Hongtao Li
Publication year - 2021
Publication title -
materials research express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.383
H-Index - 35
ISSN - 2053-1591
DOI - 10.1088/2053-1591/ac22c5
Subject(s) - trimethylgallium , triethylgallium , metalorganic vapour phase epitaxy , chemical vapor deposition , materials science , inductively coupled plasma , sapphire , thin film , analytical chemistry (journal) , plasma , substrate (aquarium) , optoelectronics , epitaxy , chemistry , nanotechnology , optics , laser , physics , quantum mechanics , chromatography , layer (electronics) , oceanography , geology
An inductively coupled plasma metal organic chemical vapor deposition (ICP-MOCVD) based on showerhead structure is proposed for the low temperature growth of thin solid films including GaN. The flow field of precursors in the chamber of ICP-MOCVD was analyzed and the structure of showerhead was optimized by changing the showerhead diameter to obtain uniform velocity field above the substrate. The thickness non-uniformity of GaN films grown at 600 °C was improved from 5.14% to 1.86% after the optimization of showerhead. On that basis, the influence of triethylgallium (TEG) and trimethylgallium (TMG) on low-temperature GaN growth were investigated and TEG was proved to be the more appropriate Ga source in this case. Finally, GaN film with high c -axis and in-plane orientations was obtained on sputtered AlN/sapphire template and the full width half maximums of (002) and (102) x-ray rocking curves are 0.45° and 0.57° respectively. Our results provide a practicable method for the optimization of low-temperature MOCVD, which has potential to obtain large-scale crystalline films at low temperature.