Open AccessThe role of copper on the restoration of graphene oxide by chemical vapor deposition
Author(s) -
Xinliang Yang,
Zijian Zhang,
Sifan He,
Wenjie Wu,
Xiangfeng Shu,
Yijun Chen,
Zhaokai Zhang,
Kai Jiang,
Jianlong Liu,
Yenan Song
Publication year - 2021
Publication title -
materials research express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.383
H-Index - 35
ISSN - 2053-1591
DOI - 10.1088/2053-1591/abfb2a
Subject(s) - graphene , oxide , chemical vapor deposition , materials science , copper , substrate (aquarium) , graphene oxide paper , chemical engineering , dielectric , deposition (geology) , nanotechnology , optoelectronics , metallurgy , paleontology , oceanography , sediment , engineering , biology , geology
High-quality reduced graphene oxide (rGO) sheets can be accessible through Langmuir-Blodgett self-assembly (LBSA) on copper foil and dielectric substrate under high temperature ethanol vapors via chemical vapor deposition (CVD) process. Through the LBSA forming method, a uniform and smooth graphene oxide (GO) film can be obtained on the target substrate, which is more economical and efficient compared to the traditional growth strategy. Moreover, the GO-derived graphene film repaired on copper was nearly defect-free with a negligible defect density (I D /I G ratio of <0.1) and manifested a strong 2D peak, indicating high efficiency of defects restoration. The obtained rGO sheets exhibited excellent electrical properties (1.2 kΩ/sq prepared on SiO 2 /Si, 0.2 kΩ/sq prepared on copper and subsequently transferred to SiO 2 /Si) that had surpassed other GO-derived graphene ever reported. Meanwhile, we demonstrate that Cu-vapor will degrade the restoration efficiency when introduced remotely, which is quite different from previous studies on graphene growth.