Open AccessZnO/graphene ambipolar transistor with low sub-threshold swing
Author(s) -
Byeong-Hyeok Kim,
Suk Ki Hong,
Jang-Won Kang
Publication year - 2021
Publication title -
materials research express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.383
H-Index - 35
ISSN - 2053-1591
DOI - 10.1088/2053-1591/abe8e7
Subject(s) - graphene , ambipolar diffusion , materials science , x ray photoelectron spectroscopy , raman spectroscopy , optoelectronics , oxide , transistor , thin film transistor , nanotechnology , layer (electronics) , chemical engineering , electrical engineering , optics , plasma , physics , quantum mechanics , voltage , engineering , metallurgy
We reported on enhanced device performance of ambipolar thin-film transistors (TFTs) with hybrid channel of Zinc oxide (ZnO) and multi-layer graphene (MLG), especially in reduced sub-threshold swing characteristics and increased carrier mobilities for the ambipolar conduction. The Raman spectroscopy and x-ray photoelectron spectroscopy (XPS) showed that the single-layer graphene could be damaged by oxidation during the ZnO growth process. In MLG, we observed that the graphene layers distant from the interface of ZnO/graphene could be protected, leading to enhanced electrical properties in ZnO/graphene hybrid TFTs. These results showed that the ZnO/MLG hybrid structure is a suitable building block to realize advanced TFTs with low power consumption and high switching speed.