Open AccessHfB2-doped ZrB2-30 vol.% SiC composites: oxidation resistance behavior
Author(s) -
Ebrahim Dodi,
Zohre Balak,
Hosein Kafashan
Publication year - 2021
Publication title -
materials research express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.383
H-Index - 35
ISSN - 2053-1591
DOI - 10.1088/2053-1591/abdf1a
Subject(s) - spark plasma sintering , materials science , microstructure , scanning electron microscope , composite material , layer (electronics) , sintering , doping , optoelectronics
To investigate the HfB 2 on microstructure and oxidation resistance of ZrB 2 -30 vol% SiC, ZrB 2 -30 vol% SiC composites with different amounts of HfB 2 (4, 8, and 12 vol%) were consolidated by Spark Plasma Sintering method (SPS). Microstructural evaluations were done by scanning electron microscopic (SEM). To investigate the oxidation resistance, the samples were placed in a box furnace at the temperature of 1400 C for different times. The samples were weighed before and after the oxidation and the Δw was applied as a criterion of oxidation. The thickness of SiO 2 layer and Si depleted layer were also used as oxidation criterion. The results showed that HfB 2 addition caused to decrease Δw and better oxidation resistance.