Open AccessFabrication of high quantum efficiency p-i-n AlGaN detector and optimization of p-layer and i-layer thickness
Author(s) -
Zhenzhou Cao,
Degang Zhao,
Feng Liang,
Zongshun Liu
Publication year - 2020
Publication title -
materials research express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.383
H-Index - 35
ISSN - 2053-1591
DOI - 10.1088/2053-1591/abca6e
Subject(s) - responsivity , quantum efficiency , photodetector , fabrication , optoelectronics , layer (electronics) , materials science , detector , reliability (semiconductor) , electric field , biasing , voltage , optics , physics , nanotechnology , quantum mechanics , medicine , power (physics) , alternative medicine , pathology
In this paper, the fabrication process and structure of AlGaN based p-i-n photodetectors with different layer thicknesses are described. The maximum external quantum efficiency (EQE) of back illumination is 87.87% at zero bias. According to the Poisson equation, the electric field distribution of the devices is analysed, and a detailed method to estimate the reverse bias voltage required for the p-layer and i-layer to be completely depleted is proposed. The reliability of the method is also well proven by the responsivity measurement results under zero bias and reverse bias. Finally, based on the experimental data and theoretical calculation, the optimization method of p-layer and i-layer thickness in p-i-n photodetector is analysed.