Open AccessEffect of thermal annealing on the optical stability of amorphous Ge–Se–Te films
Author(s) -
Jinbo Chen,
Jingshuang Qin,
Limeng Zhang,
Yimin Chen,
Xiang Shen,
Jierong Gu,
Tao Xu
Publication year - 2020
Publication title -
materials research express
Language(s) - English
Resource type - Journals
ISSN - 2053-1591
DOI - 10.1088/2053-1591/abc4b7
Subject(s) - chalcogenide , refractive index , materials science , annealing (glass) , band gap , thermal stability , amorphous solid , germanium , optics , optoelectronics , analytical chemistry (journal) , chemistry , crystallography , silicon , composite material , physics , organic chemistry , chromatography
Ge–Se–Te chalcogenide films with Ge content from 10% to 27% were prepared using thermal evaporation. The films were annealed with different times, and the changes of the linear refractive index and optical band gap of the films with different chemical compositions were investigated. It was found that, after 30 h of annealing, the Ge 20 Se 8.5 Te 71.5 film exhibits the smallest change ratio in terms of linear refractive index (<0.5%), optical band gap (<1.5%), and thickness (<2.5%). Therefore, this component has the best optical stability in the Ge–Se–Te system studied in this paper. The optical band gap of Ge 20 Se 8.5 Te 71.5 is about 0.8 eV, and the refractive index exceeds 3.4, which is beneficial to the applications in Te-based optical waveguide devices.