Open AccessThe effect of base pressure and manganese oxidation on preparation of Mn3O4 and higher manganese silicide
Author(s) -
Wangheng Pan,
Jinmin Zhang,
Lei Feng,
Jian Xie,
Qingquan Xiao,
Qiuhong Xie
Publication year - 2020
Publication title -
materials research express
Language(s) - English
Resource type - Journals
ISSN - 2053-1591
DOI - 10.1088/2053-1591/abbf83
Subject(s) - manganese , sputtering , materials science , base (topology) , silicide , scanning electron microscope , sputter deposition , base metal , analytical chemistry (journal) , silicon , metallurgy , thin film , chemistry , nanotechnology , composite material , mathematical analysis , mathematics , chromatography , welding
In the process of preparing higher manganese silicide (HMS) by magnetron sputtering method, the sputtering base pressure is often a neglected parameter, manganese oxidation is a very difficult problem to avoid. Based on these situations, this paper takes sputtering base pressure as a variable and uses naturally oxidized manganese target as raw material to prepare samples with optimal experimental parameters of HMS, studied the impact of manganese oxidation on the preparation of HMS. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to characterize and analyze the obtained films. It is found that Mn 3 O 4 could be well prepared by MnO and MnO 2 on silicon substrate by the same preparation technology to prepare HMS, while control the base pressure higher than 7 × 10 −5 Pa. The MnO existence will not cause a negative impact to the production of HMS, but MnO 2 should be avoided in any process. When MnO and MnO 2 exist at the same time, the sputtering base pressure range of 4 × 10 −3 –8 × 10 −4 Pa should be avoided. The base pressure additionally has a strong regulate effect on the grain size of Mn 3 O 4 .