Open AccessInGaAs x-ray photodiode for spectroscopy
Author(s) -
M. D. C. Whitaker,
G. Lioliou,
A. B. Krysa,
A. M. Barnett
Publication year - 2020
Publication title -
materials research express
Language(s) - English
Resource type - Journals
ISSN - 2053-1591
DOI - 10.1088/2053-1591/abbaf9
Subject(s) - preamplifier , photodiode , detector , spectrometer , photon counting , optoelectronics , materials science , x ray detector , epitaxy , optics , resolution (logic) , spectroscopy , noise (video) , x ray , physics , analytical chemistry (journal) , chemistry , amplifier , nanotechnology , cmos , layer (electronics) , quantum mechanics , artificial intelligence , computer science , image (mathematics) , chromatography
A prototype In 0.53 Ga 0.47 As p + -i-n + x-ray photodiode, fabricated from material grown by metalorganic vapour phase epitaxy, was investigated as a novel detector of x-rays. The detector was connected to a custom low-noise charge sensitive preamplifier and standard readout electronics to produce an x-ray spectrometer. The detector and preamplifier were operated at a temperature of 233 K (−40 °C). An energy resolution of 1.18 keV ± 0.06 keV Full Width at Half Maximum at 5.9 keV was achieved. This is the first time InGaAs (GaInAs) has been shown to be capable of spectroscopic photon counting x-ray detection.