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We investigate the structural, electronic and magnetic properties of LaMnO 3 /BaTiO 3  heterostructure by means of  ab initio  calculations within the GGA+ U  approach. We consider the heterostructure when ferroelectric polarization in the BaTiO 3  film is oriented perpendicular to the LaMnO 3  substrate. We present atom and spin-resolved density of states calculations for LaMnO 3 /BaTiO 3  heterostructure with different number of BaTiO 3  overlayers as well as layer-resolved spectra for the conducting heterostructure. We found that the LaMnO 3 /BaTiO 3  heterostructure becomes conducting with a significant spin polarization indicating that the interface becomes ferromagnetically ordered. The propose concept of a ferroelectrically controlled interface ferromagnetism that offers the possibility to design novel electronic devices.

Ab initio investigation of electronic and magnetic properties of antiferromagnetic/ferroelectric LaMnO3/BaTiO3 interface

Ab initio investigation of electronic and magnetic properties of antiferromagnetic/ferroelectric LaMnO₃/BaTiO₃ interface