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Modification in properties of Ni-NWs meshes by Ar+ ions beam irradiation
Author(s) -
Shehla Honey,
Jamil Asim,
Ishaq Ahmad,
Tingkai Zhao,
Malik Maaza,
Shahzad Naseem
Publication year - 2020
Publication title -
materials research express
Language(s) - English
Resource type - Journals
ISSN - 2053-1591
DOI - 10.1088/2053-1591/ab8493
Subject(s) - materials science , fluence , ion , argon , irradiation , transmission electron microscopy , nanowire , focused ion beam , ion beam , optoelectronics , analytical chemistry (journal) , atomic physics , nanotechnology , chemistry , physics , organic chemistry , nuclear physics , chromatography
Influence of 30 kilo-electron-volt (keV) Argon (Ar + ) ions on optical and electrical properties of nickel nanowires (Ni-NWs) meshes is being reported. Ni-NWs are being exposed to 30 keV Argon (Ar + ) ions at various beam fluencies. These fluencies of Ar + ions are 7 × 10 14 ions cm −2 , 3 × 10 15 ions cm −2 and 3 × 10 16 ions cm −2 . After irradiation, Ni-NWs meshes were analyzed through transmission electron microscopy technique (TEM). The structural analysis has been done through X-ray diffraction technique. It is found from TEM results that atoms are sputtered out from surfaces of Ni-NWs due to collision cascade effect persistently and lead to reduce the diameters or thicknesses of Ni-NWs. X-ray diffraction results reveal that crystalline quality is reduced under Ar + ions irradiation which may be due to defects induced in Ni-NWs as a result of collision cascade effect. The Ni-NWs meshes are characterized optically and electrically through UV–VIS spectroscopy and four probe techniques. The optical transparencies of Ni-NWs meshes are increasing with increase in beam fluence of Ar + ions. The electrical conductivity of the mesh is decreased continuously with increment in beam fluence of Ar + ions which might be due to production of defects in Ni-NWs. The tuning of optical transparency and electrical conductivity of Ni-NWs meshes is required for their application as successful transparent electrodes in optoelectronic nanodevices.

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