z-logo
open-access-imgOpen Access
Effect of annealing temperature on structure-property correlations in Zn2SnO4 nanostructured films for optoelectronics
Author(s) -
Isha Arora,
Praveen Kumar
Publication year - 2020
Publication title -
materials research express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.383
H-Index - 35
ISSN - 2053-1591
DOI - 10.1088/2053-1591/ab730e
Subject(s) - materials science , crystallite , annealing (glass) , photoluminescence , spectroscopy , electrical resistivity and conductivity , band gap , analytical chemistry (journal) , optoelectronics , composite material , chemistry , metallurgy , physics , chromatography , quantum mechanics , electrical engineering , engineering
In the present work, the effect of annealing temperature on structural, optical and electrical properties for sol gel synthesized Zn 2 SnO 4 nanostructured films has been investigated for their suitability in optoelectronics. These samples were probed by using XRD, UV-Visible spectroscopy, photoluminescence spectroscopy and Hall measurements. The x-ray diffraction study divulges the polycrystalline nature and phase transition from cubic inverse spinal Zn 2 SnO 4 phase to pervoskite ZnSnO 3 phase in the synthesized films. The optical transmission of ∼43 %–73 % in the visible region while the optical gap varies from 3.61–3.95 eV has been observed for the annealed films. The defect related emission peaks at 423, 445 and 481 nm has been observed. The lowest electrical resistivity (5.8 × 10 –3 Ω cm) and highest figure of merit  (10 –3 Ω −1 ) for the films annealed at 600 °C has been observed. These results are very important for the development of new n-type transparent conductor for various optoelectronic devices.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here