Open AccessLatent tracks of swift Bi ions in Si3N4
Author(s) -
A. Janse van Vuuren,
Anel Ibrayeva,
R.A. Rymzhanov,
A. Zhalmagambetova,
J.H. O’Connell,
V.A. Skuratov,
В.В. Углов,
S.V. Zlotski,
А. Е. Волков,
М. В. Здоровец
Publication year - 2020
Publication title -
materials research express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.383
H-Index - 35
ISSN - 2053-1591
DOI - 10.1088/2053-1591/ab72d3
Subject(s) - ion , ion track , radius , crystallite , track (disk drive) , materials science , core (optical fiber) , thermal , latent image , analytical chemistry (journal) , crystallography , chemistry , physics , thermodynamics , image (mathematics) , composite material , computer science , computer security , organic chemistry , chromatography , artificial intelligence , operating system
Parameters such as track diameter and microstruture of latent tracks in polycrystalline Si 3 N 4 induced by 710 MeV Bi ions were studied using TEM and XRD techniques, and MD simulation. Experimental results are considered in terms of the framework of a ‘core–shell’ inelastic thermal spike (i-TS) model. The average track radius determined by means of electron microscopy coincides with that deduced from computer modelling and is similar to the track core size predicted by the i-TS model using a boiling criterion. Indirect (XRD) techniques give a larger average latent track radius which is consistent with the integral nature of the signal collected from the probed volume of irradiated material.