Cu(II) and Gd(III) doped boehmite nanostructures: a comparative study of electrical property and thermal stability
Author(s) -
Shubham Roy,
Souravi Bardhan,
Dipak Kr. Chanda,
Anupam Maity,
Saheli Ghosh,
Dhananjoy Mondal,
Subhankar K. Singh,
Sukhen Das
Publication year - 2020
Publication title -
materials research express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.383
H-Index - 35
ISSN - 2053-1591
DOI - 10.1088/2053-1591/ab715e
Subject(s) - boehmite , materials science , doping , orthorhombic crystal system , dielectric , electrical resistivity and conductivity , rietveld refinement , nanomaterials , nanoparticle , thermal stability , chemical engineering , nanotechnology , crystal structure , composite material , crystallography , optoelectronics , chemistry , aluminium , electrical engineering , engineering
The present article reports the effect of transition (Cu 2+ ) and rare earth metal (Gd 3+ ) ion doping on structural, microstructural and electrical properties of boehmite nanoparticles. Rietveld refinement is adopted here to refine the x-ray diffractograms for further analyzing the microstructural details and their alteration due to the incorporation of foreign cations. This is probably the first time when dielectric properties of these doped boehmite samples having been reported herein. These samples show remarkably high dielectric constant values which corroborate that doping enhances the microstrain values inside the orthorhombic structure and results in higher crystallographic defects. Enhancement in defect sites causes the augmentation of relative permittivity and ac conductivity. Temperature stability has also been enhanced significantly in our Cu-doped sample. The present study enables us to determine a relationship between crystalline deformation and electrical properties of nanomaterials which may be highly beneficial in fabricating cost-effective energy harvesting devices.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom