Photoelectric properties of Bi2Se3 films grown by thermal evaporation method | Zendy

Xiao Liu | Zendy; Qiya Liu | Zendy; Min Zhang | Zendy; Liu Ligang | Zendy

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Photoelectric properties of Bi₂Se₃ films grown by thermal evaporation method

Author(s) -

Xiao Liu,

Qiya Liu,

Min Zhang,

Liu Ligang

Publication year - 2020

Publication title -

materials research express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.383

H-Index - 35

ISSN - 2053-1591

DOI - 10.1088/2053-1591/ab692f

Subject(s) - photocurrent , solar cell , band gap , materials science , photoelectric effect , evaporation , semiconductor , analytical chemistry (journal) , morphology (biology) , thermal , optoelectronics , chemistry , physics , genetics , chromatography , biology , meteorology , thermodynamics

The Bi 2 Se 3 films were prepared by thermal evaporation on different substrates (FTO, ITO and Glass). The structure and morphology are characterized by XRD and SEM. The optical band gap ( E g ) is 1.47 eV, 1.54 eV, and 1.59 eV, respectively. The I-V and C–V curves have been obtained by a photoelectrochemical (PEC) cell system, and the results indicated the Bi 2 Se 3 film is n -type semiconductor. The transient photocurrent response of Bi 2 Se 3 /FTO and Bi 2 Se 3 /ITO were measured to evaluate the application potential of Bi 2 Se 3 films in solar cell. The above results indicated that the Bi 2 Se 3 films have advantages in the application of solar cells.

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