Open AccessPhotoelectric properties of Bi2Se3 films grown by thermal evaporation method
Author(s) -
Lixin Xiao,
Qiya Liu,
Min Zhang,
Liu Ligang
Publication year - 2020
Publication title -
materials research express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.383
H-Index - 35
ISSN - 2053-1591
DOI - 10.1088/2053-1591/ab692f
Subject(s) - photocurrent , band gap , solar cell , photoelectric effect , materials science , evaporation , semiconductor , analytical chemistry (journal) , morphology (biology) , thermal , thin film , photoconductivity , optoelectronics , nanotechnology , chemistry , physics , genetics , chromatography , biology , meteorology , thermodynamics
The Bi 2 Se 3 films were prepared by thermal evaporation on different substrates (FTO, ITO and Glass). The structure and morphology are characterized by XRD and SEM. The optical band gap ( E g ) is 1.47 eV, 1.54 eV, and 1.59 eV, respectively. The I-V and C–V curves have been obtained by a photoelectrochemical (PEC) cell system, and the results indicated the Bi 2 Se 3 film is n -type semiconductor. The transient photocurrent response of Bi 2 Se 3 /FTO and Bi 2 Se 3 /ITO were measured to evaluate the application potential of Bi 2 Se 3 films in solar cell. The above results indicated that the Bi 2 Se 3 films have advantages in the application of solar cells.