Open AccessA generic method to control hysteresis and memory effect in Van der Waals hybrids
Author(s) -
Tanweer Ahmed,
Saurav Islam,
Tathagata Paul,
N Hariharan,
Suja Elizabeth,
Arindam Ghosh
Publication year - 2020
Publication title -
materials research express
Language(s) - English
Resource type - Journals
ISSN - 2053-1591
DOI - 10.1088/2053-1591/ab6923
Subject(s) - capacitance , materials science , hysteresis , optoelectronics , van der waals force , transistor , leakage (economics) , voltage , field effect transistor , nanotechnology , electrical engineering , topology (electrical circuits) , physics , condensed matter physics , engineering , molecule , quantum mechanics , electrode , economics , macroeconomics
The diverse properties of two-dimensional materials have been utilized in a variety of architecture to fabricate high quality electronic circuit elements. Here we demonstrate a generic method to control hysteresis and stable memory effect in Van der Waals hybrids with a floating gate as the base layer. The floating gate can be charged with a global back gate-voltage, which it can retain in a stable manner. Such devices can provide a very high, leakage-free effective gate-voltage on the field-effect transistors due to effective capacitance amplification, which also leads to reduced input power requirements on electronic devices. The capacitance amplification factor of ∼10 can be further enhanced by increasing the area of the floating gate. We have exploited this method to achieve highly durable memory action multiple genre of ultra-thin 2D channels, including graphene, MoS 2 , and topological insulators at room temperature.