Open AccessFerroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures
Author(s) -
Shihong Xie,
Anubhab Dey,
Yan Wu,
Zakhar R. Kudrynskyi,
Nilanthy Balakrishnan,
O. Makarovsky,
Zakhar D. Kovalyuk,
Eli Casta,
Oleg Kolosov,
Kaiyou Wang,
A. Patanè
Publication year - 2021
Publication title -
2d materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.702
H-Index - 72
ISSN - 2053-1583
DOI - 10.1088/2053-1583/ac1ada
Subject(s) - ferroelectricity , graphene , materials science , semiconductor , van der waals force , heterojunction , optoelectronics , miniaturization , thermionic emission , nanotechnology , quantum tunnelling , electron , chemistry , physics , dielectric , organic chemistry , quantum mechanics , molecule
The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waals (vdW) two-dimensional materials with potential for nano-ferroelectrics. Here, we report on ferroelectric semiconductor junctions (FSJs) in which the ferroelectric vdW semiconductor α -In 2 Se 3 is embedded between two single-layer graphene electrodes. In these two-terminal devices, the ferroelectric polarization of the nanometre-thick In 2 Se 3 layer modulates the transmission of electrons across the graphene/In 2 Se 3 interface, leading to memristive effects that are controlled by applied voltages and/or by light. The underlying mechanisms of conduction are examined over a range of temperatures and under light excitation revealing thermionic injection, tunnelling and trap-assisted transport. These findings are relevant to future developments of FSJs whose geometry is well suited to miniaturization and low-power electronics, offering opportunities to expand functionalities of ferroelectrics by design of the vdW heterostructure.