Open AccessA complete analytical potential based solution for a 4H-SiC MOSFET in nanoscale
Author(s) -
Menka Yadav,
K P Pradhan,
Prasanna Kumar Sahu
Publication year - 2016
Publication title -
advances in natural sciences nanoscience and nanotechnology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.476
H-Index - 40
ISSN - 2043-6262
DOI - 10.1088/2043-6262/7/2/025011
Subject(s) - mosfet , silicon carbide , threshold voltage , poisson's equation , electric field , materials science , boundary value problem , channel (broadcasting) , voltage , electric potential , drain induced barrier lowering , optoelectronics , doping , computational physics , transistor , electrical engineering , physics , engineering , quantum mechanics , metallurgy