Open AccessThe effect of interface trapped charges in DMG-S-SOI MOSFET: a perspective study
Author(s) -
Sushanta Kumar Mohapatra,
K P Pradhan,
Protyush Sahu,
G. S. Pati,
Mukesh Kumar
Publication year - 2014
Publication title -
advances in natural sciences nanoscience and nanotechnology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.476
H-Index - 40
ISSN - 2043-6262
DOI - 10.1088/2043-6262/5/4/045015
Subject(s) - silicon on insulator , mosfet , threshold voltage , interface (matter) , voltage , charge (physics) , optoelectronics , materials science , transistor , field effect transistor , semiconductor , condensed matter physics , silicon , electrical engineering , physics , engineering , quantum mechanics , capillary number , capillary action , composite material