Open AccessLinear and non-linear optical properties of reactive magnetron DC sputtered ZnTe thin films for opto-electronic devices
Author(s) -
B. Hymavathi,
Bindey Kumar,
T. Srinivasa Rao
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/998/1/012010
Subject(s) - refractive index , telluride , thin film , band gap , sputter deposition , dispersion (optics) , materials science , optoelectronics , cavity magnetron , dispersion relation , optics , analytical chemistry (journal) , sputtering , chemistry , physics , nanotechnology , chromatography , metallurgy
Zinc Telluride thin films were prepared by reactive magnetron direct current sputtering method and the temperature of the glass substrates changed from 150 to 350 °C. The band gap of ZnTe films increased from 2.32 to 2.42eV. The normal dispersion of refractive index (n) for ZnTe films is described using the model of Wemple-Di Domenico (WDD) single-oscillator. The oscillator energy, dispersive energy and static refractive index (n o ) of ZnTe films were reported. The Verdet coefficient (V) is estimated from the normal dispersion studies. The first-order (I st ) and third-order (III rd ) non-linear optical susceptibilities (χ (1) , χ (3) ), refractive index (n 2 ) of ZnTe films were calculated.