Open AccessStrategic Review on Different Materials for FinFET Structure Performance Optimization
Author(s) -
K. Madhavi,
Suman Lata Tripathi
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/988/1/012054
Subject(s) - materials science , optoelectronics , mosfet , epitaxy , cmos , metal gate , doping , leakage (economics) , nanotechnology , etching (microfabrication) , silicon on insulator , gate oxide , electronic engineering , silicon , electrical engineering , transistor , layer (electronics) , engineering , voltage , economics , macroeconomics
In this paper, the strategic review of different materials that are used in FinFET structure is studied. This is achieved by using carefully designed source/drain spacers and doped extensions to mitigate the off-current, typically high in narrow band-gap materials, as part of a CMOS compatible replacement-metal gate process flow. FinFETs are promising substitutes for bulk complementary metal oxide semiconductor. FinFETs are dual-gate devices and Good electrostatic characteristics which are obtained in a wide range of device dimensions. The simulations provide further insights into device functionality and about the dominant off-state leakage mechanisms. The GaAs material was examined by scanning transmission electron microscopy (STEM) and the epitaxial structures showed good crystal quality. In this various types of materials are used and studied they are FinFET based Dual KK-structure, InGaAs-on-Insulator FinFET, Double Gate based n-FinFET using Hafnium oxide, SOI-FinFETs, MosFET (Multi gate), Deeply Scaled CMOS, FinFET, Selective Epitaxial Si Growth in FinFET and Atomic Layer Deposition (ALD) in FinFET. Furthermore, we demonstrate a controlled GaAs digital etching process to create doped extensions below the source-drain spacer regions.