Open AccessPSPICE compact model for power MOSFET based on manufacturer datasheet
Author(s) -
Abdelghafour Galadi
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/948/1/012007
Subject(s) - datasheet , mosfet , power mosfet , electronic engineering , power (physics) , signal (programming language) , nonlinear system , spice , voltage , electrical engineering , computer science , engineering , transistor , physics , quantum mechanics , programming language
In this paper, large signal model for power MOSFET devices is presented. The proposed model includes quasi-saturation effect and describes accurately the electrical behavior of the power MOSFET devices. The large signal model elements will be provided based on the device structure. Furthermore, the model parameters are extracted from measurements considering the voltages depending effect of the nonlinear gate-source, gate-drain and drain-source interelectrode capacitances. Excellent agreements will be shown between the simulated and the datasheet data. Finally, a description of the model will be provided along with the parameter extraction procedure.