Open AccessTechnology for forming micro devices based on gallium nitride
Author(s) -
А. В. Желаннов,
Б. И. Селезнев,
Д. Г. Федоров
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/939/1/012082
Subject(s) - materials science , ohmic contact , gallium nitride , grinding , optoelectronics , passivation , nitride , transistor , metallurgy , nanotechnology , electrical engineering , engineering , layer (electronics) , voltage
The technology of forming micro devices based on gallium nitride, including the main stages of manufacturing, namely, inter-assembly isolation, formation of non-straightening (ohmic) and straightening (Schottky barrier) contacts, surface passivation, formation of inter-electric connections in the form of “air bridges”, plate grinding, cutting plate into crystals and sorting out, is considered. A short technological cycle of manufacturing microstructures with a description of the main operations is given. As a result of this work, experimental samples of transistors with a gate length of 0.5 microns were obtained.