Open AccessInvestigation effect of ZnO content on the structural and electrical properties of pulsed laser deposited (NiO)1-x (ZnO)x thin films
Author(s) -
Ameer J. Fadle,
Mohmmed Ebd Alhur,
Bushra A. Hasan
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/928/7/072060
Subject(s) - non blocking i/o , materials science , thin film , hall effect , substrate (aquarium) , analytical chemistry (journal) , pulsed laser deposition , electrical resistivity and conductivity , diffraction , conductivity , nanotechnology , optics , chemistry , biochemistry , oceanography , physics , engineering , chromatography , geology , electrical engineering , catalysis
This research is devoted to the effect of investigation of the ZnO content on the structural and electrical properties of (NiO) 1-x (ZnO) x films prepared by pulsed laser precipitation on the glass substrate at room temperature. Thin-film (NiO) 1-x (ZnO) x sediments were deposited with different composition ratios where x = 0, 0.2, 0.4, 0.6 and 1.0 with a thickness of n150nm. The diffraction pattern for X-ray analysis reveals that the structure of the prepared thin films is identical with the cubic phase and hexadecimal stage of x = 0 and 0.1, respectively while the structure is mixed with the remaining x value from both stages. It involves studying the conductivity versus temperature to estimate conduction mechanisms and the Hall effect for determining type and carrier concentration as well as movement values. The results showed that there are two connection mechanisms and thus activation energies. Hall Effect showed that most of the prepared thin films were converted from type p to n of type x at = 0.2 and 1.0. Concentration of the carrier increases twice the volume while the mobility decreases by two degrees of volume by increasing the ZnO content from 0.0 to 1.0. The results were explained in terms of variation in the size of the crystals by increasing the ZnO content in the prepared thin films.