Open AccessSynthesis of ZnO:B thin films Dropped on Porous Silicon for H2Gas Sensing
Author(s) -
Rashid Hashim Jabbar,
Israa Hadi Hilal,
Mudar Ahmed Abdulsattar
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/928/7/072035
Subject(s) - materials science , thin film , substrate (aquarium) , boron , crystallite , silicon , zinc , porous silicon , pyrolysis , porosity , analytical chemistry (journal) , doping , chemical engineering , spray pyrolysis , nanotechnology , composite material , optoelectronics , metallurgy , chemistry , chromatography , organic chemistry , oceanography , engineering , geology
Porous Silicon PS has been prepared so as to use it a substrate to dropped ZnO:B thin films with different boron concentrations additions (2- 8) % dropped at 450°C through used the chemical spray pyrolysis (CSP) technique in approximately 150nm thicknesses. Crystallite and Grain size decreases with adding more of boron as a doping for zinc oxide films which dropped on the negative type (n-type) and positive type (p-type) of PS. Surface morphology study for the obtained the ZnO:B thin films and for the n-PS and p-PS was studied by TEM, SEM and AFM. Sensing properties of ZnO:B thin films for H 2 gas showed that the increases of boron leads to increases of the thin films sensitivity, measured sensitivity of the n-PS substrate was more than p-PS.