Open AccessObtaining SiC single crystals, and comparing characteristics of its solid solutions, films, Schottky diodes
Author(s) -
R. H. Dadashev,
В. И. Алтухов,
А. В. Санкин,
D. K. Sysoev,
D. Z. Elimkhanov,
M. A. A. Gudaev,
R.T. Uspazhiev
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/905/1/012017
Subject(s) - schottky diode , materials science , diode , optoelectronics , schottky barrier , metal–semiconductor junction , silicon , silicon carbide , voltage , electrical engineering , composite material , engineering
The main methods for producing 4H-SiC single crystals and films of its solid solutions are considered. A new technique for producing single crystals of SiC polytypes is described. A new nonlinear model of the Schottky barrier height (BS) has been developed, and the current-voltage characteristics of Schottky diodes have been obtained, their comparison with the I–V characteristics of silicon-based diodes has been made.