Open AccessDeep levels model identification in semiconductor barrier structures
Author(s) -
Владимир Крылов,
K V Tatmyshevskiy,
Aleksey Bogachev
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/896/1/012125
Subject(s) - deep level transient spectroscopy , semiconductor , transient (computer programming) , capacitance , diode , parametric statistics , semiconductor device , capacitive sensing , computer science , nonlinear system , electronic engineering , optoelectronics , electrical engineering , materials science , silicon , engineering , physics , mathematics , nanotechnology , quantum mechanics , layer (electronics) , statistics , electrode , operating system
Semiconductor barrier structures are essential elements of modern integrated electronics. The band theory explains properties of barrier structures using deep levels in the semiconductor band gap. The relentless interest in studying the characteristics of deep levels is due to practical needs, ambiguous interpretations and scatters of experimental results obtained by different researchers. In order to increase the accuracy of the measurements, a modified capacitive deep-level transient spectroscopy technic of has been developed. A mathematical model of the hardware transformations of the barrier structure capacitance transient signal is developed and provided in this article. The model considers the nonexponentiality of the capacitance transient and the spectrometer hardware transformations nonlinearity. There are the results of the deep levels experimental studies in silicon diodes and the model parametric identification. The technic makes it possible to reduce by five or more times the six-sigma confidence interval for the discrete deep level activation energy determining in comparison with the round robin test results of ASTM F978-02.