Open AccessHopping conduction in single crystals of the diluted magnetic semiconductor (Zn1-xFex)3As2 (x=0.005)
Author(s) -
В. С. Захвалинский,
E. A. Pilyuk,
Т. Б. Никуличева
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/889/1/012033
Subject(s) - materials science , magnetic semiconductor , magnetoresistance , variable range hopping , atmospheric temperature range , semiconductor , condensed matter physics , electrical resistivity and conductivity , conductivity , analytical chemistry (journal) , thermal conduction , range (aeronautics) , magnetic field , chemistry , thermodynamics , optoelectronics , composite material , electrical engineering , physics , quantum mechanics , chromatography , engineering
Single crystals of the diluted magnetic semiconductor (Zn 1- x Fe x ) 3 As 2 ( x = 0.005) were obtained by modified Bridgman method. According to the results of the X-ray powder diffractometry, the material was single-phased and isomorphic and corresponded to the pure Zn 3 As 2 ( x = 0.0). The research of the electroconductivity and the magnetoresistance was carried out at the temperature range from 10 to 300 K. It was found out that the electroconductivity in the temperature range 11 ÷ 19 K corresponded to the mechanism of the Mott type variable-range hopping conductivity. The microparameters, characterizing electroconductivity (Zn 1- x Fe x ) 3 As 2 ( x = 0.005) at the temperature range of 11 ÷ 19 K, were defined.