Open AccessImpact of Tin concentration in ITO films on Optoelectronic sensor performance
Author(s) -
G. Ramanathan,
K. R. Murali
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/872/1/012168
Subject(s) - tin , materials science , grain size , dye sensitized solar cell , thin film , sol gel , chemical engineering , optoelectronics , analytical chemistry (journal) , nanotechnology , composite material , chemistry , electrode , metallurgy , chromatography , electrolyte , engineering
In viewing the opportunity to enhance Photovoltaic application, nine samples having different concentrations (5%, to 70%) were synthesized by sol gel Acrylamide route. XRD study indicates the entire films exhibited single phase with bixbyte structure for all films. EDXA studies confirm the existence SnO 2 enclosures in the entire samples. Atomic force micrographs of ITO films conclude that the grain size decreases with increase of tin concentration. Hot probe measurements reinforce the optimum concentration of tin (10%) for its transport properties, their optoelectronic application of DSSC. This paper focuses on the DSSC performance. In this work ITO films and their gas sensing characteristics are studied and their results are reported. ITO based H2S sensor with 70% tin concentration exhibited maximum sensitivity at 100 °C with higher recovery time than the response times. After a long time, ITO films with different concentrations of tin (450 °C) return to the original state.