Open AccessThin Film Transistors p-type Depletion Mode based on Nickel-doped Zinc Oxide
Author(s) -
Ali Ahmed Mirza,
Ghusoon M. Ali
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/870/1/012124
Subject(s) - materials science , wurtzite crystal structure , thin film transistor , thin film , nanorod , optoelectronics , scanning electron microscope , electron mobility , doping , analytical chemistry (journal) , zinc , nanotechnology , composite material , metallurgy , layer (electronics) , chemistry , chromatography
In this work, Nickel-doped Zinc oxide (Ni:ZnO) thin film transistors (TFTs) p-type depletion mode were fabricated with different channel lengths. Channel lengths for TFTs were 50 μm, 70 μm and 100 μm. Ni:ZnO thin films deposited by hydrothermal technique The X-ray Diffraction (XRD) was used to examine the structural analytic of the prepared thin films. The diffraction peaks of prepared Ni:ZnO thin films are fairly matching with the hexagonal wurtzite ZnO structure with the preferred orientation (002) plane. The Scanning Electron Microscopy (SEM) with Atomic Force Microscopy (AFM) were used to characterize the surface morphologies of the fabricated thin films and study them. The SEM images confirm nanorods nanostructures. Hall Effect measurements reveal that the fabricated thin film is p-type. The characterization of Ni:ZnO TFTs p-type depletion mode was investigated by transfer (IDS–VGS) characteristics. The threshold voltage (VTh), subthreshold-swing (S.S), the on-off current ratio (ION/OFF) and the mobility carrier (saturation regime) were calculated. The 50μm Ni:ZnO TFT shows better performance based on device carrier mobility and highest ION/OFF ratio.