Open AccessMetrological parameters of semiconductor sensors of hydrogen sulfide SCS-H2S with membrane coatings based on tungsten and copper oxides
Author(s) -
I. E. Abdurakhmanov,
Begmatov Rizamat Khushvaqtovich,
Ergashboy Abdurakhmanov,
O. N. Kholboev,
F F Kholmirzaev
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/862/6/062084
Subject(s) - hydrogen sulfide sensor , hydrogen sulfide , semiconductor , materials science , hydrogen , hydrogen sensor , sulfide , tungsten , conductivity , membrane , copper , electrical resistance and conductance , metrology , sorption , inorganic chemistry , analytical chemistry (journal) , optoelectronics , chemistry , metallurgy , adsorption , composite material , catalysis , optics , organic chemistry , palladium , sulfur , biochemistry , physics
The paper shows the possibility of using metal oxides W and Cu as a gas-sensitive material of a semiconductor hydrogen sulfide sensor. The results of studying the following metrological parameters of SCS-H 2 S are presented: calibration characteristic, selectivity, measurement range and basic error, the effect of pressure on the values of the input signal and the sensor’s resistance to concentration overloads. The principle of operation of the developed semiconductor hydrogen sulfide sensor is to change the electrical conductivity of the gas-sensitive layer as a result of sorption of hydrogen sulfide.