Open AccessDry etching of silicon carbide in ICP with high anisotropy and etching rate
Author(s) -
А. А. Осипов,
Anastasiya Speshilova,
Ekaterina V. Endiiarova,
Sergei Alexandrov
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/862/2/022039
Subject(s) - etching (microfabrication) , silicon carbide , reactive ion etching , dry etching , analytical chemistry (journal) , materials science , isotropic etching , inductively coupled plasma , plasma etching , silicon , carbide , crystal (programming language) , plasma , chemistry , nanotechnology , composite material , metallurgy , chromatography , layer (electronics) , physics , quantum mechanics , programming language , computer science
A detailed study of the influence of technological parameters of the plasma chemical etching process in inductively coupled plasma on the etching rate of single-crystal silicon carbide is presented. The physicochemical substantiation of experimentally revealed patterns is given. The optimal gas mixture was determined in terms of the etching rate of SiC. It was experimentally established that the dependence of the etching rate of silicon carbide on the percentage of oxygen in the total gas mixture is non-linear. Thus, with an increase in the percentage of O 2 up to 23%, the etching rate of SiC gradually increases to 560 nm/min, a further increase in the percentage of O 2 leads to a sharp decrease in the etching rate of SiC up to 160 nm/min at an oxygen content of 31%. The effect of the distance between the sample and the plasma generation zone on the etching rate of SiC was studied. It was shown that the greatest increase in speed is caused by an increase in the bias voltage, so at U bias = - 50 V the etching rate is 300 nm/min, and at Ubias = - 150 V the value of the etching rate is 840 nm/min. The optimal parameters of the plasma-chemical etching process were selected for high-speed directional etching of single-crystal silicon carbide substrates.