Open AccessTemperature-dependent photoluminescence of H2TPP and ZnTPP thin films on Si substrates
Author(s) -
N. Nurhayati,
Veinardi Suendo,
A. A. Nugroho,
Anita Alni
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/858/1/012036
Subject(s) - photoluminescence , atmospheric temperature range , materials science , thermalisation , thin film , spontaneous emission , relaxation (psychology) , analytical chemistry (journal) , silicon , luminescence , photoluminescence excitation , optoelectronics , laser , atomic physics , optics , chemistry , nanotechnology , physics , psychology , social psychology , chromatography , meteorology
Temperature-dependent photoluminescence (PL) properties of tetraphenyl porphyrin (H 2 TPP) and Zinc-tetraphenyl porphyrin (ZnTPP) thin films on the silicon substrates has been investigated. The photoluminescence (PL) properties are observed within the temperature range of 163–543 °K. The 405 nm diode laser beam is used to excite the molecule during the photoluminescence measurement. The integrated PL intensity exhibits abnormal behaviour, the intensity decreases with temperature in the temperature range of 163-273 °K, and then followed by the increase in the further temperature range of 273-543 °K. This anomaly reflects the competition between the radiative recombination process and the non-radiative recombination processes, i.e. carrier capture, thermalization, and carrier relaxation processes. The peak energy of 0-0 and 0-1 transitions show a red-shift with temperature, while their full width at half maximum increases.