Open AccessPhosphors based on Ce:(Pb,Gd)3(Al,Ga)5O12 epitaxial films: synthesis, optical properties, application
Author(s) -
Д. А. Васильев,
D. Spassky,
В. Г. Плотниченко,
V. V. Voronov,
A. V. Khakhalin,
A. M. Galstyan,
Н. В. Васильева
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/848/1/012095
Subject(s) - epitaxy , materials science , doping , phosphor , analytical chemistry (journal) , cathodoluminescence , absorption (acoustics) , supercooling , crystallography , optoelectronics , luminescence , nanotechnology , chemistry , chromatography , composite material , physics , thermodynamics , layer (electronics)
Ce-doped (Pb, Gd) 3 (Al, Ga) 5 O 12 single crystalline garnet films were grown using liquid-phase epitaxy method from supercooled PbO–B 2 O 3 -based melt solutions on substrates from Gd 3 Ga 5 O 12 and Gd 3 Al 2.26 Ga 2.74 O 12 single crystals. Optical absorption and photo- and cathodoluminescent properties of these epitaxial garnet films were studied. Ce-doped (Pb, Gd) 3 (Al, Ga) 5 O 12 garnet films can be used as a fast phosphor in the design of a PIF-01 electron-optical converter.