Open AccessThermal conductivity of SiC-B4C materials obtained by reaction-sintering method
Author(s) -
С. Н. Перевислов,
E.S. Motaylo,
Е. С. Новоселов,
Д. Д. Несмелов
Publication year - 2020
Publication title -
iop conference series. materials science and engineering
Language(s) - English
Resource type - Journals
eISSN - 1757-899X
pISSN - 1757-8981
DOI - 10.1088/1757-899x/848/1/012066
Subject(s) - thermal conductivity , boron carbide , materials science , silicon carbide , sintering , composite material , atmospheric temperature range , conductivity , carbide , composite number , thermal conductivity measurement , boron , thermal , thermodynamics , chemistry , physics , organic chemistry
In this research, temperature dependences of the thermal conductivity of reaction-bonded SiC – B 4 C composite materials at the temperature range of 293 – 1400 K were investigated. The effect of B 4 C concentration on thermal conductivity is shown. The thermal conductivity of SiC – B 4 C materials were compared with the thermal conductivity of materials based on silicon carbide and boron carbide obtained by different methods.